S1P05R120HBB MOSFET Datasheet & Specifications
N-Channel
Through Hole,62.8x56.8mm
Logic-Level
Sichainsemi
Vds Max
1.2kV
Id Max
240A
Rds(on)
-
Vgs(th)
2.8V
Quick Reference
The S1P05R120HBB is an N-Channel MOSFET in a Through Hole,62.8x56.8mm package, manufactured by Sichainsemi. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 240A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Sichainsemi | Original Manufacturer |
| Package | Through Hole,62.8x56.8mm | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 240A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.8V | Voltage required to turn on |
| Gate Charge (Qg) | 576nC | Switching energy |
| Input Capacitance (Ciss) | 16.2pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -40℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||