S1M075120J2 MOSFET Datasheet & Specifications

N-Channel TO-263-7L Logic-Level Sichainsemi
Vds Max
1.2kV
Id Max
39A
Rds(on)
75mΩ@15V
Vgs(th)
2.8V

Quick Reference

The S1M075120J2 is an N-Channel MOSFET in a TO-263-7L package, manufactured by Sichainsemi. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 39A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSichainsemiOriginal Manufacturer
PackageTO-263-7LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)39AMax current handling
Power Dissipation (Pd)169WMax thermal limit
On-Resistance (Rds(on))75mΩ@15VResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)40nCSwitching energy
Input Capacitance (Ciss)1.02nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BCBF120N40M1 N-Channel TO-263-7L 1.2kV 60A 40mΩ 3V
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