S-MMBTA42LT1G Transistor Datasheet & Specifications

NPN BJT | JSMSEMI

NPNSOT-23General Purpose
VCEO
300V
Ic Max
500mA
Pd Max
350mW
Gain
60

Quick Reference

The S-MMBTA42LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the S-MMBTA42LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO300VBreakdown voltage
IC Max500mACollector current
Pd Max350mWPower dissipation
Gain60DC current gain
Frequency50MHzTransition speed
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DN350T05-7NPNSOT-23350V500mA300mW
MMBTA42Q-7-FNPNSOT-23300V500mA300mW
MMBTA42NPNSOT-23300V300mA350mW
SMMBTA42LT1GNPNSOT-23300V500mA225mW
SMMBTA42LT3GNPNSOT-23300V500mA225mW
MMBTA42-7-FNPNSOT-23300V500mA300mW
MMBTA42NPNSOT-23300V300mA350mW
MMBTA42NPNSOT-23300V300mA350mW