RT1A050ZPTR MOSFET Datasheet & Specifications
P-Channel
TSST-8
Logic-Level
ROHM
Vds Max
12V
Id Max
5A
Rds(on)
26mΩ@4.5V
Vgs(th)
1V
Quick Reference
The RT1A050ZPTR is an P-Channel MOSFET in a TSST-8 package, manufactured by ROHM. It supports a drain-source breakdown voltage of 12V and a continuous drain current of 5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TSST-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| On-Resistance (Rds(on)) | 26mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 34nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 2.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 340pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||