RS65R190S MOSFET Datasheet & Specifications
N-Channel
TO-263
High-Voltage
REASUNOS
Vds Max
650V
Id Max
20A
Rds(on)
160mΩ@10V
Vgs(th)
4V
Quick Reference
The RS65R190S is an N-Channel MOSFET in a TO-263 package, manufactured by REASUNOS. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | REASUNOS | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 134W | Max thermal limit |
| On-Resistance (Rds(on)) | 160mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 36nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.49nF | Internal gate capacitance |
| Output Capacitance (Coss) | 101pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BMB65N065UC1 | N-Channel | TO-263 | 650V | 55A | 65mΩ@10V | 3.8V | Bestirpower |
| NCE65TF099D | N-Channel | TO-263 | 650V | 38A | 89mΩ@10V | 3.5V | NCE 📄 PDF |
| NCE65T180D | N-Channel | TO-263 | 650V | 21A | 180mΩ@10V | 4V | NCE 📄 PDF |