RHU002N06T106 MOSFET Datasheet & Specifications

N-Channel SOT-323 Logic-Level ROHM
Vds Max
60V
Id Max
200mA
Rds(on)
4Ω@4V
Vgs(th)
2.5V

Quick Reference

The RHU002N06T106 is an N-Channel MOSFET in a SOT-323 package, manufactured by ROHM. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 200mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)200mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
On-Resistance (Rds(on))4Ω@4VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)4.4nC@10VSwitching energy
Input Capacitance (Ciss)15pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
2N7002W-7-F-ES N-Channel SOT-323 60V 300mA 1.85Ω@10V
2.05Ω@4.5V
1.6V
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2N7002KW N-Channel SOT-323 60V 300mA 1.85Ω@10V 1.6V
ElecSuper 📄 PDF