PZTA42T1G Datasheet & Equivalents
NPN
SOT-223
General Purpose
onsemi
VCEO
300V
Ic Max
500mA
Pd Max
1.5W
hFE Gain
40
Quick Reference
The PZTA42T1G is a NPN bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 300V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| DC Current Gain (hFE) | 40 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |