PZT651T1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-223General Purpose
VCEO
60V
Ic Max
2A
Pd Max
800mW
Gain
75

Quick Reference

The PZT651T1G is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the PZT651T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max800mWPower dissipation
Gain75DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo75MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZX5T851GTANPNSOT-22360V6A1.6W
STN851NPNSOT-22360V5A1.6W
BCP54TANPNSOT-22345V1A2W
BCP55TANPNSOT-22360V1A2W
FZT690BTANPNSOT-22345V3A3W
FZT692BTANPNSOT-22370V2A3W
BCP54-16NPNSOT-22345V1A1.5W
2STN1360NPNSOT-22360V3A1.6W
BCP54NPNSOT-22345V1A1.33W
TPBCP54-16NPNSOT-22345V1A1.5W