PZT2907AT1G Datasheet & Equivalents

PNP SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
600mA
Pd Max
1.5W
hFE Gain
75

Quick Reference

The PZT2907AT1G is a PNP bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)75Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)400mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current10nALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
PZT2907AT3G PNP SOT-223 60V 600mA 75 1.5W
DZT2907A-13 PNP SOT-223 60V 600mA 100 1W
FZT591TA PNP SOT-223 60V 1A 80 1.6W
BCP52-10 PNP SOT-223 60V 1A 63 1.5W
BCP52 PNP SOT-223 60V 1A 63 1.5W
AD-BCP52-16 PNP SOT-223 60V 1A 100 1.5W
BCP52-16(RANGE:100-250) PNP SOT-223 60V 1A 100 1.5W
BCP52 PNP SOT-223 60V 1A 250 1.3W
BCP53-16 PNP SOT-223 80V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF
115 PNP SOT-223 80V 1A 100 1.5W
BCP53(RANGE:100-150) PNP SOT-223 80V 1A 100 1.5W
TECH PUBLIC ๐Ÿ“„ PDF
TPBCP53-16 PNP SOT-223 80V 1A 100 1.5W
BCP53-16 PNP SOT-223 80V 1A 40 1.6W
BCP53-16 PNP SOT-223 80V 1A 25 1.5W
HXY MOSFET ๐Ÿ“„ PDF
HBCP5316 PNP SOT-223 80V 1A 25 1.5W
GOODWORK ๐Ÿ“„ PDF
BCP53-16 PNP SOT-223 80V 1A 250 1.5W
BCP53-16-JSM PNP SOT-223 80V 1A 250 2W
BCP5316TC PNP SOT-223 80V 1A 250 1.5W
HXY MOSFET ๐Ÿ“„ PDF
BCP53 PNP SOT-223 80V 1A 250 1.3W
BCP53 PNP SOT-223 80V 1A 250 1.5W
YONGYUTAI ๐Ÿ“„ PDF