PTQ45P02 MOSFET Datasheet & Specifications
P-Channel
PDFN-8(3.3x3.3)
High-Current
HT(Shenzhen Jinyu Semicon)
Vds Max
20V
Id Max
50A
Rds(on)
5.6mΩ@4.5V
Vgs(th)
-
Quick Reference
The PTQ45P02 is an P-Channel MOSFET in a PDFN-8(3.3x3.3) package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 20V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | PDFN-8(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 42W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.6mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 55nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 4.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 577pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AGM30P08AP | P-Channel | PDFN-8(3.3x3.3) | 30V | 60A | 7.2mΩ@10V 11.5mΩ@4.5V |
1.7V | AGMSEMI 📄 PDF |
| AON7405 | P-Channel | PDFN-8(3.3x3.3) | 30V | 50A | 24mΩ@4.5V | 2.5V | TECH PUBLIC 📄 PDF |
| SI7423DN-TP | P-Channel | PDFN-8(3.3x3.3) | 30V | 50A | 24mΩ@4.5V | 2.5V | TECH PUBLIC 📄 PDF |
| AON7409 | P-Channel | PDFN-8(3.3x3.3) | 30V | 50A | 24mΩ@4.5V | 2.5V | TECH PUBLIC 📄 PDF |