PSMN8R9-100BSE,118 MOSFET Datasheet & Specifications
N-Channel
D2PAK
Logic-Level
Nexperia
Vds Max
100V
Id Max
75A
Rds(on)
8mΩ@10V
Vgs(th)
2.7V
Quick Reference
The PSMN8R9-100BSE,118 is an N-Channel MOSFET in a D2PAK package, manufactured by Nexperia. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 75A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | D2PAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 75A | Max current handling |
| Power Dissipation (Pd) | 296W | Max thermal limit |
| On-Resistance (Rds(on)) | 8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.7V | Voltage required to turn on |
| Gate Charge (Qg) | 114nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7.028nF | Internal gate capacitance |
| Output Capacitance (Coss) | 447pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BMB65N046UE1 | N-Channel | D2PAK | 650V | 76A | 46mΩ@10V | 3V | Bestirpower 📄 PDF |