PMGD175XNEX MOSFET Array Datasheet & Equivalents
N-Channel Array
SC-70-6(SOT-363)
Logic-Level
Nexperia
Vds Max
30V
Id Max
950mA
Rds(on)
252mΩ@4.5V
Vgs(th)
1.25V
Quick Reference
The PMGD175XNEX is a N-Channel Array in a SC-70-6(SOT-363) package, manufactured by Nexperia. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 950mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SC-70-6(SOT-363) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 950mA | Max current handling |
| Power Dissipation (Pd) | 390mW | Max thermal limit |
| On-Resistance (Rds(on)) | 252mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.25V | Voltage required to turn on |
| Gate Charge (Qg) | 1.65nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 81pF | Internal gate capacitance |
| Output Capacitance (Coss) | 13pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||