PMBT5551,215 Transistor Datasheet & Specifications

NPN BJT | Nexperia

NPNSOT-23General Purpose
VCEO
160V
Ic Max
300mA
Pd Max
250mW
Gain
80

Quick Reference

The PMBT5551,215 is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 160V breakdown voltage and 300mA continuous collector current. Download the PMBT5551,215 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO160VBreakdown voltage
IC Max300mACollector current
Pd Max250mWPower dissipation
Gain80DC current gain
Frequency100MHzTransition speed
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBTA42NPNSOT-23300V300mA350mW
MMBT5551NPNSOT-23160V600mA225mW
MMBT5551NPNSOT-23160V600mA225mW
FMMT495TANPNSOT-23150V1A500mW
FMMT624TANPNSOT-23125V1A625mW
MMBT5551-TPNPNSOT-23160V600mA300mW
MMBT5551-ENPNSOT-23160V600mA300mW
MMBT5551NPNSOT-23160V600mA225mW
MMBT5551NPNSOT-23160V600mA225mW
MMBT5551(RANGE:200-300)NPNSOT-23160V600mA300mW