PJS6603_S2_00001 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-23-6
Logic-Level
PANJIT
Vds Max
30V
Id Max
4.4A
Rds(on)
110mΩ@10V
Vgs(th)
2.1V
Quick Reference
The PJS6603_S2_00001 is a Dual N/P-Channel in a SOT-23-6 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 4.4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | PANJIT | Original Manufacturer |
| Package | SOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.4A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| On-Resistance (Rds(on)) | 110mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.1V | Voltage required to turn on |
| Gate Charge (Qg) | 9.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 396pF | Internal gate capacitance |
| Output Capacitance (Coss) | 47pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PJS6604_S2_00001 | Dual N/P-Channel | SOT-23-6 | 30V | 4.4A | 98mΩ@10V | 1.3V | PANJIT 📄 PDF |