PJS6601_S2_00001 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-23-6
Logic-Level
PANJIT
Vds Max
20V
Id Max
4.1A
Rds(on)
100mΩ@4.5V
Vgs(th)
1.2V
Quick Reference
The PJS6601_S2_00001 is a Dual N/P-Channel in a SOT-23-6 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.1A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | PANJIT | Original Manufacturer |
| Package | SOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.1A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| On-Resistance (Rds(on)) | 100mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 5.4nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 416pF | Internal gate capacitance |
| Output Capacitance (Coss) | 43pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PJS6601-AU_S1_000A1 | Dual N/P-Channel | SOT-23-6 | 20V | 4.1A | 190mΩ@1.8V | 1.2V | PANJIT 📄 PDF |
| PJS6604_S2_00001 | Dual N/P-Channel | SOT-23-6 | 30V | 4.4A | 98mΩ@10V | 1.3V | PANJIT 📄 PDF |