PJQ5866A_R2_00001 MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN5060B-8
Logic-Level
PANJIT
Vds Max
60V
Id Max
40A
Rds(on)
17mΩ@10V
Vgs(th)
2.5V
Quick Reference
The PJQ5866A_R2_00001 is a N-Channel Array in a DFN5060B-8 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 40A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | PANJIT | Original Manufacturer |
| Package | DFN5060B-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 40A | Max current handling |
| Power Dissipation (Pd) | 56W | Max thermal limit |
| On-Resistance (Rds(on)) | 17mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 13.5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.574nF | Internal gate capacitance |
| Output Capacitance (Coss) | 118pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PJQ5866A-AU_R2_000A1 | N-Channel Array | DFN5060B-8 | 60V | 40A | 20mΩ@4.5V | 2.5V | PANJIT 📄 PDF |