PGT12N028H MOSFET Datasheet & Specifications
N-Channel
TOLL-8L
High-Current
HT(Shenzhen Jinyu Semicon)
Vds Max
120V
Id Max
250A
Rds(on)
2.2mΩ@10V
Vgs(th)
4V
Quick Reference
The PGT12N028H is an N-Channel MOSFET in a TOLL-8L package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 120V and a continuous drain current of 250A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | TOLL-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 120V | Max breakdown voltage |
| Continuous Drain Current (Id) | 250A | Max current handling |
| Power Dissipation (Pd) | 278W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 149nC@10V | Switching energy |
| Input Capacitance (Ciss) | 11.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.26nF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BLP038N15-T | N-Channel | TOLL-8L | 150V | 254A | 2.9mΩ@10V | 3V | BL 📄 PDF |
| HSY1502 | N-Channel | TOLL-8L | 150V | 255A | 4mΩ@10V | 4V | HUASHUO 📄 PDF |