PGN04N060 MOSFET Datasheet & Specifications
N-Channel
PDFN5X6-8L
Logic-Level
HT(Shenzhen Jinyu Semicon)
Vds Max
40V
Id Max
60A
Rds(on)
4.8mΩ@10V
Vgs(th)
2.2V
Quick Reference
The PGN04N060 is an N-Channel MOSFET in a PDFN5X6-8L package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 40V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | PDFN5X6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 40W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 17nC@10V | Switching energy |
| Input Capacitance (Ciss) | 887pF | Internal gate capacitance |
| Output Capacitance (Coss) | 545pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |