PBSS8110T,215 Transistor Datasheet & Specifications

NPN BJT | Nexperia

NPNSOT-23General Purpose
VCEO
100V
Ic Max
1A
Pd Max
480mW
Gain
150

Quick Reference

The PBSS8110T,215 is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the PBSS8110T,215 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO100VBreakdown voltage
IC Max1ACollector current
Pd Max480mWPower dissipation
Gain150DC current gain
Frequency100MHzTransition speed
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTANPNSOT-23100V4A1.2W
FMMT415TDNPNSOT-23100V500mA500mW
ZXTN25100DFHTANPNSOT-23100V2.5A1.25W
MMBTA06-7-FNPNSOT-2380V500mA350mW
NSS1C201LT1GNPNSOT-23100V2A710mW
MMBTA06-TPNPNSOT-2380V500mA300mW
FMMT493TANPNSOT-23100V1A500mW
FMMT493NPNSOT-23100V1A250mW
MMBTA06(RANGE:100-400)NPNSOT-2380V500mA300mW
FMMT624TANPNSOT-23125V1A625mW