PBSS5630PA,115 Datasheet & Equivalents
PNP
SOT-1061
High Power
Nexperia
VCEO
30V
Ic Max
6A
Pd Max
1.4W
hFE Gain
230
Quick Reference
The PBSS5630PA,115 is a PNP bipolar junction transistor in a SOT-1061 package, manufactured by Nexperia. It supports a breakdown voltage of 30V and continuous collector current of 6A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-1061 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 6A | Max current handling |
| Power Dissipation (Pd) | 1.4W | Max thermal limit |
| DC Current Gain (hFE) | 230 | Base signal amplification ratio |
| Transition Frequency (fT) | 80MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||