PBSS5160QAZ Datasheet & Equivalents
PNP
DFN-1010
General Purpose
Nexperia
VCEO
60V
Ic Max
1A
Pd Max
1W
hFE Gain
160
Quick Reference
The PBSS5160QAZ is a PNP bipolar junction transistor in a DFN-1010 package, manufactured by Nexperia. It supports a breakdown voltage of 60V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | DFN-1010 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 160 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 225mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||