PBSS2515M,315 Datasheet & Equivalents
NPN
SOT-883
General Purpose
Nexperia
VCEO
15V
Ic Max
500mA
Pd Max
430mW
hFE Gain
90
Quick Reference
The PBSS2515M,315 is a NPN bipolar junction transistor in a SOT-883 package, manufactured by Nexperia. It supports a breakdown voltage of 15V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-883 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 15V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 430mW | Max thermal limit |
| DC Current Gain (hFE) | 90 | Base signal amplification ratio |
| Transition Frequency (fT) | 420MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 50uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||