OSB688 Datasheet & Equivalents
NPN+PNP
TO-3P
High Power
OSEN
VCEO
120V
Ic Max
10A
Pd Max
100W
hFE Gain
160
Quick Reference
The OSB688 is a NPN+PNP bipolar junction transistor array in a TO-3P package, manufactured by OSEN. It supports a breakdown voltage of 120V and continuous collector current of 10A per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | OSEN | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 120V | Max breakdown voltage |
| Collector Current (Ic) | 10A | Max current handling |
| Power Dissipation (Pd) | 100W | Max thermal limit |
| DC Current Gain (hFE) | 160 | Base signal amplification ratio |
| Transition Frequency (fT) | 10MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||