NX1029XH MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-666
Logic-Level
Nexperia
Vds Max
60V;50V
Id Max
170mA
Rds(on)
7.5Ω@10V
Vgs(th)
1.1V
Quick Reference
The NX1029XH is a Dual N/P-Channel in a SOT-666 package, manufactured by Nexperia. Each channel supports a drain-source breakdown voltage of 60V;50V and a continuous drain current of 170mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-666 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V;50V | Max breakdown voltage |
| Continuous Drain Current (Id) | 170mA | Max current handling |
| Power Dissipation (Pd) | 330mW | Max thermal limit |
| On-Resistance (Rds(on)) | 7.5Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.1V | Voltage required to turn on |
| Gate Charge (Qg) | 350pC@5V | Switching energy |
| Input Capacitance (Ciss) | 24pF | Internal gate capacitance |
| Output Capacitance (Coss) | 7pF;4.5pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||