NVMFD5C650NLWFT1G MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN-8(4.9x5.9)
Logic-Level
onsemi
Vds Max
60V
Id Max
111A
Rds(on)
4.2mΩ@10V;5.8mΩ@4.5V
Vgs(th)
2.2V
Quick Reference
The NVMFD5C650NLWFT1G is a N-Channel Array in a DFN-8(4.9x5.9) package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 111A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DFN-8(4.9x5.9) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 111A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.2mΩ@10V;5.8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 37nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.546nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.258nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||