NVMFD5C478NT1G MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN-8(5x6)
Standard Power
onsemi
Vds Max
40V
Id Max
27A
Rds(on)
14mΩ
Vgs(th)
3.5V
Quick Reference
The NVMFD5C478NT1G is a N-Channel Array in a DFN-8(5x6) package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 27A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 27A | Max current handling |
| Power Dissipation (Pd) | 23W | Max thermal limit |
| On-Resistance (Rds(on)) | 14mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 325pF | Internal gate capacitance |
| Output Capacitance (Coss) | 165pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |