NVJD4152PT1G MOSFET Array Datasheet & Equivalents
P-Channel Array
SC-88
Logic-Level
onsemi
Vds Max
20V
Id Max
880mA
Rds(on)
260mΩ@4.5V
Vgs(th)
1.2V
Quick Reference
The NVJD4152PT1G is a P-Channel Array in a SC-88 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 880mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SC-88 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 880mA | Max current handling |
| Power Dissipation (Pd) | 272mW | Max thermal limit |
| On-Resistance (Rds(on)) | 260mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 2.2nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 155pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NTJD4152PT1G | P-Channel Array | SC-88 | 20V | 880mA | 260mΩ@4.5V | 1.2V | onsemi 📄 PDF |