NTS4409NT1G MOSFET Datasheet & Specifications

N-Channel SOT-323 Logic-Level onsemi
Vds Max
25V
Id Max
700mA
Rds(on)
400mΩ@2.7V
Vgs(th)
1.5V

Quick Reference

The NTS4409NT1G is an N-Channel MOSFET in a SOT-323 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 25V and a continuous drain current of 700mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)25VMax breakdown voltage
Continuous Drain Current (Id)700mAMax current handling
Power Dissipation (Pd)330mWMax thermal limit
On-Resistance (Rds(on))400mΩ@2.7VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)1.5nC@4.5VSwitching energy
Input Capacitance (Ciss)60pFInternal gate capacitance
Output Capacitance (Coss)30pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMN3065LW-7 N-Channel SOT-323 30V 4A 85mΩ@2.5V 1.5V
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NX3008NBKW-TP N-Channel SOT-323 30V 800mA 650mΩ@2.5V 1.2V
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