NTS2101PT1G MOSFET Datasheet & Specifications
P-Channel
SOT-323
Logic-Level
onsemi
Vds Max
8V
Id Max
1.4A
Rds(on)
117mΩ@1.8V
Vgs(th)
700mV
Quick Reference
The NTS2101PT1G is an P-Channel MOSFET in a SOT-323 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 8V and a continuous drain current of 1.4A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 8V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.4A | Max current handling |
| Power Dissipation (Pd) | 330mW | Max thermal limit |
| On-Resistance (Rds(on)) | 117mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 700mV | Voltage required to turn on |
| Gate Charge (Qg) | 6.4nC@5V | Switching energy |
| Input Capacitance (Ciss) | 640pF | Internal gate capacitance |
| Output Capacitance (Coss) | 120pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMP2165UW-7 | P-Channel | SOT-323 | 20V | 2.5A | 180mΩ@1.8V | 1V | DIODES 📄 PDF |