NTND31200PZTAG MOSFET Array Datasheet & Equivalents

P-Channel Array - Logic-Level onsemi
Vds Max
20V
Id Max
127mA
Rds(on)
10Ī©@1.5V
Vgs(th)
1V

Quick Reference

The NTND31200PZTAG is a P-Channel Array in a - package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 127mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)127mAMax current handling
Power Dissipation (Pd)166mWMax thermal limit
On-Resistance (Rds(on))10Ī©@1.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)12.8pFInternal gate capacitance
Output Capacitance (Coss)2.8pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP2101UCP9-7 P-Channel Array - 20V 3.1A 63mΩ@4.5V 740mV
DMP22D5UDR4-7 P-Channel Array - 20V 360mA 5Ī©@1.5V 1V
NTND31211PZTAG P-Channel Array - 20V 127mA 10Ī©@1.5V 1V