NTMS10P02R2G-VB MOSFET Datasheet & Specifications
P-Channel
SO-8
Logic-Level
VBsemi Elec
Vds Max
20V
Id Max
13A
Rds(on)
15mΩ@4.5V;21mΩ@2.5V;40mΩ@1.8V
Vgs(th)
1.2V
Quick Reference
The NTMS10P02R2G-VB is an P-Channel MOSFET in a SO-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 13A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13A | Max current handling |
| Power Dissipation (Pd) | 19W | Max thermal limit |
| On-Resistance (Rds(on)) | 15mΩ@4.5V;21mΩ@2.5V;40mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 50nC@8V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI9430DY-T1-E3-VB | P-Channel | SO-8 | 20V | 13A | 15mΩ@4.5V 21mΩ@2.5V 40mΩ@1.8V |
500mV | VBsemi Elec 📄 PDF |
| SI7149ADP-T1-GE3 | P-Channel | SO-8 | 30V | 23.1A | 5.2mΩ@10V | 1.2V | VISHAY 📄 PDF |
| AO4447A-VB | P-Channel | SO-8 | 30V | 13.5A | 11mΩ@10V 15mΩ@4.5V |
1.4V | VBsemi Elec 📄 PDF |