NTMFWS1D5N08XT1G MOSFET Datasheet & Specifications
N-Channel
DFN-6(5x6)
High-Current
onsemi
Vds Max
80V
Id Max
253A
Rds(on)
1.43mΩ@10V
Vgs(th)
3.6V
Quick Reference
The NTMFWS1D5N08XT1G is an N-Channel MOSFET in a DFN-6(5x6) package, manufactured by onsemi. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 253A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DFN-6(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 253A | Max current handling |
| Power Dissipation (Pd) | 194W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.43mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.6V | Voltage required to turn on |
| Gate Charge (Qg) | 83nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.88nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.69nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||