NTMD3P03R2G MOSFET Array Datasheet & Equivalents

P-Channel Array SOIC-8 Logic-Level onsemi
Vds Max
30V
Id Max
2.34A
Rds(on)
-
Vgs(th)
2.5V

Quick Reference

The NTMD3P03R2G is a P-Channel Array in a SOIC-8 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 2.34A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOIC-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)2.34AMax current handling
Power Dissipation (Pd)730mWMax thermal limit
On-Resistance (Rds(on))-Resistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)25nC@10VSwitching energy
Input Capacitance (Ciss)750pFInternal gate capacitance
Output Capacitance (Coss)325pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
FDS4935A P-Channel Array SOIC-8 30V 7A 35mฮฉ@4.5V 3V
SQ4949EY-T1_BE3 P-Channel Array SOIC-8 30V 7.5A 65mฮฉ@4.5V 2.5V
SQ4949EY-T1_GE3 P-Channel Array SOIC-8 30V 7.5A 65mฮฉ@4.5V 2.5V
AO4803A P-Channel Array SOIC-8 30V 30A 74mฮฉ@4.5V 2.5V
SI4953DY P-Channel Array SOIC-8 30V 4.9A 95mฮฉ@4.5V 1V
ZXMP6A16DN8QTA P-Channel Array SOIC-8 60V 3.9A 125mฮฉ@4.5V 1V