NTLJS2103PTBG MOSFET Datasheet & Specifications
P-Channel
WDFN-6(2x2)
Logic-Level
onsemi
Vds Max
12V
Id Max
7.7A
Rds(on)
40mΩ@4.5V
Vgs(th)
800mV
Quick Reference
The NTLJS2103PTBG is an P-Channel MOSFET in a WDFN-6(2x2) package, manufactured by onsemi. It supports a drain-source breakdown voltage of 12V and a continuous drain current of 7.7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | WDFN-6(2x2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.7A | Max current handling |
| Power Dissipation (Pd) | 3.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 40mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 800mV | Voltage required to turn on |
| Gate Charge (Qg) | 15nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.157nF | Internal gate capacitance |
| Output Capacitance (Coss) | 300pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||