NTJD5121NT2G MOSFET Array Datasheet & Equivalents
N-Channel Array
SC-70-6(SOT-363)
Logic-Level
onsemi
Vds Max
60V
Id Max
295mA
Rds(on)
2.5Ω@4.5V
Vgs(th)
2.5V
Quick Reference
The NTJD5121NT2G is a N-Channel Array in a SC-70-6(SOT-363) package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 295mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SC-70-6(SOT-363) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 295mA | Max current handling |
| Power Dissipation (Pd) | 250mW | Max thermal limit |
| On-Resistance (Rds(on)) | 2.5Ω@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 900pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 26pF | Internal gate capacitance |
| Output Capacitance (Coss) | 4.4pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMN601DWK-7 | N-Channel Array | SC-70-6(SOT-363) | 60V | 305mA | 1.3Ω@10V | 1.6V | DIODES 📄 PDF |