NTGS5120PT1G MOSFET Datasheet & Specifications
P-Channel
SOT-23-6
Logic-Level
TECH PUBLIC
Vds Max
60V
Id Max
3A
Rds(on)
118mΩ@10V
Vgs(th)
1.5V
Quick Reference
The NTGS5120PT1G is an P-Channel MOSFET in a SOT-23-6 package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3A | Max current handling |
| Power Dissipation (Pd) | 1.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 118mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 17.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 637pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |