NTF6P02T3G MOSFET Datasheet & Specifications
P-Channel
SOT-223
Logic-Level
onsemi
Vds Max
20V
Id Max
10A
Rds(on)
44mΩ@4.5V
Vgs(th)
1V
Quick Reference
The NTF6P02T3G is an P-Channel MOSFET in a SOT-223 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 8.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 44mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 1.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 500pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |