NTD2955T4G MOSFET Datasheet & Specifications
P-Channel
DPAK
Standard Power
onsemi
Vds Max
60V
Id Max
12A
Rds(on)
180mΩ@10V
Vgs(th)
4V
Quick Reference
The NTD2955T4G is an P-Channel MOSFET in a DPAK package, manufactured by onsemi. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 12A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12A | Max current handling |
| Power Dissipation (Pd) | 55W | Max thermal limit |
| On-Resistance (Rds(on)) | 180mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 30nC@10V | Switching energy |
| Input Capacitance (Ciss) | 750pF | Internal gate capacitance |
| Output Capacitance (Coss) | 250pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NTD20P06LT4G | P-Channel | DPAK | 60V | 15.5A | 150mΩ@5V | 2V | onsemi 📄 PDF |