NSVBCP56-10T3G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-223General Purpose
VCEO
80V
Ic Max
1A
Pd Max
1.5W
Gain
63

Quick Reference

The NSVBCP56-10T3G is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the NSVBCP56-10T3G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max1.5WPower dissipation
Gain63DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo130MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZX5T851GTANPNSOT-22360V6A1.6W
BCP56-16NPNSOT-22380V1A1.5W
STN851NPNSOT-22360V5A1.6W
FZT493TANPNSOT-223100V1A3W
BCP55TANPNSOT-22360V1A2W
BCP5616QTANPNSOT-22380V1A2W
BCP5616TANPNSOT-22380V1A2W
FZT653TANPNSOT-223100V3A2W
BCP56TANPNSOT-22380V1A2W
BCP56-16T1GNPNSOT-22380V1A1.5W