NSVBC850CLT1G-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-23General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
200mW
Gain
800
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Quick Reference

The NSVBC850CLT1G-HXY is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the NSVBC850CLT1G-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain800DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FMMT491ATANPNSOT-2340V1A500mW
BC817-16LT1GNPNSOT-2345V500mA225mW
BC817-40LT1GNPNSOT-2345V500mA225mW
MMBT3904-7-FNPNSOT-2340V200mA310mW
S9014NPNSOT-2345V100mA300mW
ZXTN2040FTANPNSOT-2340V1A310mW
BC817-40Q-7-FNPNSOT-2345V500mA310mW
BC847B-7-FNPNSOT-2345V100mA300mW
MMBT3904NPNSOT-23-40V200mA
MMBT4401NPNSOT-2340V600mA300mW
View all SOT-23 NPN Transistors ›