NSV60200LT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
60V
Ic Max
2A
Pd Max
540mW
Gain
150
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Quick Reference

The NSV60200LT1G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the NSV60200LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max540mWPower dissipation
Gain150DC current gain
Frequency100MHzTransition speed
VCEsat95mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-FPNPSOT-2360V600mA350mW
BC856ALT1GPNPSOT-2365V100mA225mW
ZXTP2025FTAPNPSOT-2350V5A1.2W
2SA812PNPSOT-2350V100mA300mW
LBC856BLT1GPNPSOT-2365V100mA225mW
LBC807-40LT1GPNPSOT-2345V500mA225mW
MMBT2907APNPSOT-2360V600mA250mW
MMBT2907APNPSOT-2360V600mA250mW
FMMT591TAPNPSOT-2360V1A500mW
View all SOT-23 PNP Transistors ›