NP30N06QDK-E1-AY MOSFET Array Datasheet & Equivalents
N-Channel Array
HSON-8(5x5.4)
Logic-Level
RENESAS
Vds Max
60V
Id Max
30A
Rds(on)
21mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The NP30N06QDK-E1-AY is a N-Channel Array in a HSON-8(5x5.4) package, manufactured by RENESAS. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | RENESAS | Original Manufacturer |
| Package | HSON-8(5x5.4) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 59W | Max thermal limit |
| On-Resistance (Rds(on)) | 21mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 38nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.25nF | Internal gate capacitance |
| Output Capacitance (Coss) | 240pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NP29N06QDK-E1-AY | N-Channel Array | HSON-8(5x5.4) | 60V | 30A | 20mΩ@10V | 2.5V | RENESAS 📄 PDF |