NJW21194G Datasheet & Equivalents

NPN TO-3P High Power OSEN
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
160

Quick Reference

The NJW21194G is a NPN bipolar junction transistor in a TO-3P package, manufactured by OSEN. It supports a breakdown voltage of 250V and continuous collector current of 16A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerOSENOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)250VMax breakdown voltage
Collector Current (Ic)16AMax current handling
Power Dissipation (Pd)200WMax thermal limit
DC Current Gain (hFE)160Base signal amplification ratio
Transition Frequency (fT)10MHzMax operating frequency
Saturation Voltage (VCEsat)1.4VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJL1302AG NPN TO-3P 250V 16A 160 200W
MJL3281A NPN TO-3P 250V 16A 160 200W
NJW1302G-OSEN NPN TO-3P 250V 16A 160 200W
NJW3281G-OSEN NPN TO-3P 250V 16A 160 200W
2SC4110 NPN TO-3P 400V 25A 50 160W
BUF420A NPN TO-3P 450V 30A 50 200W