NJW0281G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-3PGeneral Purpose
VCEO
250V
Ic Max
15A
Pd Max
150W
Gain
75

Quick Reference

The NJW0281G is a NPN bipolar transistor in a TO-3P package. This datasheet provides complete specifications including 250V breakdown voltage and 15A continuous collector current. Download the NJW0281G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting
VCEO250VBreakdown voltage
IC Max15ACollector current
Pd Max150WPower dissipation
Gain75DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo30MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
NJW21194GNPNTO-3PNB250V16A200W