NJVMJD32CT4G-VF01 Transistor Datasheet & Specifications
PNPDPAKGeneral Purpose
VCEO
100V
Ic Max
3A
Pd Max
15W
Gain
10
Quick Reference
The NJVMJD32CT4G-VF01 is a PNP bipolar transistor in a DPAK package. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the NJVMJD32CT4G-VF01 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 3A | Collector current |
| Pd Max | 15W | Power dissipation |
| Gain | 10 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 3MHz | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD45H11T4 | PNP | DPAK | 80V | 8A | 20W |
| MJD45H11RLG | PNP | DPAK | 80V | 8A | 20W |