NCEP60T15G MOSFET Datasheet & Specifications

N-Channel DFN5X6-8L High-Current NCE
Vds Max
60V
Id Max
150A
Rds(on)
3.1mΩ@10V
Vgs(th)
4V

Quick Reference

The NCEP60T15G is an N-Channel MOSFET in a DFN5X6-8L package, manufactured by NCE. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageDFN5X6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)200WMax thermal limit
On-Resistance (Rds(on))3.1mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)70nCSwitching energy
Input Capacitance (Ciss)4.5nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.