NCEP40T11G MOSFET Datasheet & Specifications

N-Channel DFN5X6-8L Logic-Level NCE
Vds Max
40V
Id Max
110A
Rds(on)
3.9mΩ@4.5V
Vgs(th)
2.2V

Quick Reference

The NCEP40T11G is an N-Channel MOSFET in a DFN5X6-8L package, manufactured by NCE. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 110A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageDFN5X6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)110AMax current handling
Power Dissipation (Pd)75WMax thermal limit
On-Resistance (Rds(on))3.9mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)72nC@10VSwitching energy
Input Capacitance (Ciss)4.2nFInternal gate capacitance
Output Capacitance (Coss)1nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NCEP40T15GU N-Channel DFN5X6-8L 40V 150A 1.35mΩ@10V 2.2V
NCEP40T13GU N-Channel DFN5X6-8L 40V 130A 2.3mΩ@10V 2.2V
NCEP035N60AG N-Channel DFN5X6-8L 60V 110A 4.5mΩ@4.5V 2.4V