NCEP023N10T MOSFET Datasheet & Specifications (NCE, TO-247)

N-Channel TO-247 High-Current NCE
Vds Max
100V
Id Max
280A
Rds(on)
2.3mΩ@10V
Vgs(th)
4V

Quick Reference

The NCEP023N10T is an N-Channel MOSFET in a TO-247 package, manufactured by NCE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 280A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageTO-247Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)280AMax current handling
Power Dissipation (Pd)365WMax thermal limit
On-Resistance (Rds(on))2.3mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)252nC@10VSwitching energy
Input Capacitance (Ciss)17nFInternal gate capacitance
Output Capacitance (Coss)1.5nFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.