NCE8295AD MOSFET Datasheet & Specifications

N-Channel TO-263-2L High-Current NCE
Vds Max
82V
Id Max
95A
Rds(on)
8mΩ@10V
Vgs(th)
4V

Quick Reference

The NCE8295AD is an N-Channel MOSFET in a TO-263-2L package, manufactured by NCE. It supports a drain-source breakdown voltage of 82V and a continuous drain current of 95A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageTO-263-2LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)82VMax breakdown voltage
Continuous Drain Current (Id)95AMax current handling
Power Dissipation (Pd)170WMax thermal limit
On-Resistance (Rds(on))8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)109.3nC@10VSwitching energy
Input Capacitance (Ciss)6.8nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NCEP85T25D N-Channel TO-263-2L 85V 250A 2.6mΩ@10V 4.5V
CJB130SN10 N-Channel TO-263-2L 100V 130A 4.3mΩ@10V 3V
HYG053N10NS1B N-Channel TO-263-2L 100V 120A 5.5mΩ@10V 4V
HUAYI 📄 PDF
NCEP02T10D N-Channel TO-263-2L 200V 100A 12mΩ@10V 4.5V