NCE60P04Y MOSFET Datasheet & Specifications

P-Channel SOT-23-3L Logic-Level NCE
Vds Max
60V
Id Max
4A
Rds(on)
170mΩ@4.5V
Vgs(th)
3V

Quick Reference

The NCE60P04Y is an P-Channel MOSFET in a SOT-23-3L package, manufactured by NCE. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageSOT-23-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)4AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))170mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)25nC@10VSwitching energy
Input Capacitance (Ciss)930pFInternal gate capacitance
Output Capacitance (Coss)85pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NCE60P05BY P-Channel SOT-23-3L 60V 5A 85mΩ@4.5V 2V
SL05P10A P-Channel SOT-23-3L 100V 5A 250mΩ@4.5V 3V
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